2SC4589の購入情報と機能
| この部品の機能は「CTV/Character Display Horizontal Deflection Output」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC4589 Transistor | CTV/Character Display Horizontal Deflection Output |
Hitachi Semiconductor |
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| 2SC4589 Transistor | Power Bipolar Transistors |
ETC |
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| 2SC4589 Transistor | SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4589
DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV display horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 sim |
SavantIC |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC5907 | Silicon NPN Epitaxial 2SC5907
Silicon NPN Epitaxial VHF, UHF wide band amplifier
ADE-208-1603 (Z) Rev.0 Oct. 2002 Features
Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
MFPAK
3
1 2
1. Emitter 2. Base 3. Collector
Note: Marking is “WK “.
2SC5907
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol |
 Renesas |
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| 2SC5252 | Silicon NPN Triple Diffused Planar 2SC5252
Silicon NPN Triple Diffused Planar
ADE-208-391A (Z) 2nd. Edition
Application
Character display horizontal deflection output
Features
High breakdown voltage VCBO = 1500 V High speed switching tf ≤ 0.15 sec(typ.) Isolated package TO 3P FM
Outline
TO-3PFM
1. Base 2. Collector 3. Emit |
Hitachi Semiconductor |
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| 2SC4673 | UHF Low-Noise Amp/ Wide-Band Amp Applications Ordering number : EN3927
NPN Epitaxial Planar Silicon Transistor
2SC4673
UHF Low-Noise Amp, Wide-Band Amp Applications
Features
Low noise figure : NF=1.5dB typ (f=0.9GHz). High power gain : S2le 2=8.0dB typ (f=0.9GHz). High cutoff frequency : fT=4.5GH- typ.
Package Dimensions
unit: mm 2038-P |
 Sanyo Semicon Device |
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| 2SC5686 | Silicon NPN triple diffusion mesa type Power Transistors
2SC5686
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
- Features
High breakdown voltage: VCBO ≥ 2 000 V High-speed switching: tf < 200 ns Wide safe operation area
26.5±0 |
 Panasonic Semiconductor |
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