2SC4526の購入情報と機能
| この部品の機能は「NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC4526 Transistor | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
Mitsubishi Electric Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC3583 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high |
 NEC |
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| 2SC4583 | Switching Power Transistor(3A NPN) SHINDENGEN
Switching Power Transistor
HFX Series
(TP3W80HFX)
3A NPN
2SC4583
OUTLINE DIMENSIONS
Case : ITO-3P Unit : mm
RATINGS
●Absolute Maximum Ratings Item
Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Curren |
 Shindengen Electric Mfg.Co.Ltd |
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| 2SC2882 | TRANSISTOR (POWER/ VOLTAGE AMPLIFIER APPLICATIONS) |  Toshiba Semiconductor |
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| 2SC3990 | NPN Triple Diffused Planar Silicon Transistor Ordering number:EN2234C
NPN Triple Diffused Planar Silicon Transistor
2SC3990
500V, 35A Switching Regulator Applications
Features
· High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC3990]
Specificati |
 Sanyo Semicon Device |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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