2SC4518の購入情報と機能
| この部品の機能は「Silicon NPN Triple Diffused Planar Transistor(Switching Regulator/ Lighting Inverter and General Purpose)」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC4774 | High frequency amplifier transistor RF switching (6V/ 50mA) 2SC4774 , 2SC4713K
Transistors
High frequency amplifier transistor, RF switching (6V, 50mA)
2SC4774 , 2SC4713K
zFeatures 1) Very low output-on resistance (Ron). 2) Low capacitance.
2SC4774
(1)
0.65 0.65 0.7
0.8
0.3
(3)
1.25 2.1
0.1Min.
0~0.1
Collector-base voltage Collector-emitter voltage |
ROHM Semiconductor |
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| 2SC5807 | SILICON NPN EPITAXIAL TYPE | ![]() Isahaya Electronics Corporation |
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| 2SC5195 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET
SILICON TRANSISTOR
2SC5195
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Collect |
![]() NEC |
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| 2SC4604 | NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS) 2SC4604
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4604
Power Amplifier Application. Power Switching Applications.
Unit: mm
Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High-speed switching: tstg = 0.5 s (typ.) Complementary to 2SA1761
M |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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