2SC4065の購入情報と機能
| この部品の機能は「Silicon NPN Epitaxial Planar Transistor(DC Motor Driver and General Purpose)」です。 |
|
|
製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC4065 Transistor | Silicon NPN Epitaxial Planar Transistor(DC Motor Driver and General Purpose) Built-in Diode at C E Low VCE (sat)
2SC4065
(Ta=25°C) 2SC4065 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ V V MH- PF
13.0min
Equivalent circuit B
C
( 400 Ω )
E
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO |
Sanken electric |
|
PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC5508-T2 | NPN SILICON RF TRANSISTOR FOR LOW NOISE/ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5508
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
Ideal for low-noise, high-gain amplification applications NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA Maximu |
 NEC |
|
| 2SC5009-T1 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DATA SHEET
SILICON TRANSISTOR
2SC5009
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capab |
NEC |
|
| 2SC6100 | High-Speed Switching Applications 2SC6100
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6100
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 |
 Toshiba Semiconductor |
|
| 2SC1383 | Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) Transistor
2SC1383, 2SC1384
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684
5.9± 0.2
Unit: mm
4.9± 0.2
q q
Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. (Ta=25 |
 Panasonic Semiconductor |
|
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|