2SC3797の購入情報と機能
| この部品の機能は「Power Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC5552 | Silicon NPN triple diffusion mesa type(For horizontal deflection output) Power Transistors
2SC5552
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
(10.0)
15.5±0.5
φ 3.2±0.1 5°
3.0±0.3 5°
26.5±0.5
(23.4)
5° 5° 5° 0.7±0.1
I Features
High breakdown voltage, and high reliability through the use of a glass passivation layer |
Panasonic Semiconductor |
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| 2SC640 | NPN Silicon Epitaxial Planar Transistor 2SC640
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be |
![]() ETC |
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| 2SC5029 | NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS) 2SC5029
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5029
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) High collector power dissipation: PC = 1.3 W High-spe |
Toshiba Semiconductor |
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| 2SC5387 | NPN TRIPLE DIFFUSED MESA TYPE 2SC5387
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5387
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS
- High Voltage - Low Saturation Voltage - High Speed : VCBO = 1500 V : VCE (sat) = 3 V (Max.) : tf = 0.15 μs (Typ.) Unit: mm |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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