2SC3797の購入情報と機能

この部品の機能は「Power Transistor」です。


製品の詳細 ( データシート PDF )

部品番号 部品情報 メーカー PDF / カテゴリー
2SC3797 TransistorPower Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3797 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching · APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE
Inchange Semiconductor
Inchange Semiconductor
datasheet 2SC3797 pdf
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関連検索結果

部品番号 部品情報 メーカー PDF
2SC5552 Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output (10.0) 15.5±0.5 φ 3.2±0.1 5° 3.0±0.3 5° 26.5±0.5 (23.4) 5° 5° 5° 0.7±0.1 I Features High breakdown voltage, and high reliability through the use of a glass passivation layer
datasheet 2SC5552 pdf
2SC640 NPN Silicon Epitaxial Planar Transistor

2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be
datasheet 2SC640 pdf
2SC5029 NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS)

2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) High collector power dissipation: PC = 1.3 W High-spe
datasheet 2SC5029 pdf
2SC5387 NPN TRIPLE DIFFUSED MESA TYPE

2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS - High Voltage - Low Saturation Voltage - High Speed : VCBO = 1500 V : VCE (sat) = 3 V (Max.) : tf = 0.15 μs (Typ.) Unit: mm
datasheet 2SC5387 pdf


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