2SC2831の購入情報と機能
| この部品の機能は「Si NPN Triple Diffused Junction Mesa」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC5825 | Power transistor (60V/ 3A) 2SC5825
Transistors
Power transistor (60V, 3A)
2SC5825
!Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2073 !External |
ROHM Semiconductor |
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| 2SC4186 | UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DATA SHEET
SILICON TRANSISTOR
2SC4186
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
DESCRIPTION
The 2SC4186 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device features stable oscillation and sma |
![]() NEC |
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| 2SC5607 | DC / DC Converter Applications Ordering number : ENN6403A
2SC5607
NPN Epitaxial Planar Silicon Transistor
2SC5607
DC , DC Converter Applications
Applications
Package Dimensions
unit : mm 2033A
[2SC5607]
4.0 2.2
Relay drivers, lamp drivers, motor drivers, strobes.
Features
Adoption of MBIT processes. Large current c |
Sanyo Semicon Device |
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| 2SC3623A | NPN SILICON TRANSISTOR DATA SHEET
SILICON TRANSISTORS
2SC3623, 3623A
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES High hFE:
hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):
VCE(sat) = 0.07 V TYP. @IC, IB = 50 mA, 5.0 mA High VEBO:
VEBO: 12 V (2SC3623) VEBO: 15 V |
![]() NEC |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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