2SC2831の購入情報と機能
| この部品の機能は「Si NPN Triple Diffused Junction Mesa」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
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| 2SC2831 Transistor | Si NPN Triple Diffused Junction Mesa |
ETC |
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| 2SC2831 Transistor | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2831 2SC2831A
DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING
PIN 1 2 3 Base Collector;connected to |
SavantIC |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC2351 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DATA SHEET
SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
NF MAG 1.5 dB 14 dB TYP. TYP. @ f = 1.0 GH- @ f = 1.0 GHz
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2
0.4 0.05
+0.1
1.5
0.65 0.15
+0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 |
 NEC |
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| 2SC5578 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ordering number:ENN6297
NPN Triple Diffused Planar Silicon Transistor
2SC5578
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Pack |
 Sanyo Semicon Device |
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| 2SC732TM | SILOCON NPN EPITAXIAL TYPE TRANSISTOR 2SC732TM
TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC732TM
LOW NOISE AUDIO AMPLIFIER APPLICATIONS
High Breakdomn Voltage : VCEO = 50V
Excellent hFE Linearity : hFE (IC = 0.1mA), hFE (IC = 2mA) = 0.95 (Typ.)
Low Noise
: NF (1) = 0.5dB (Typ.) (f = 100Hz)
: NF (2) = 0.2dB (Typ. |
 Toshiba Semiconductor |
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| 2SC5045 | NPN Triple Diffused Planar Silicon Transistor Ordering number:EN4783
NPN Triple Diffused Planar Silicon Transistor
2SC5045
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High reliability (Adoption of HVP process).
· High breakdown voltage (VCBO=1600V). · Adoption of MBIT |
Sanyo Semicon Device |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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