2SC2778の購入情報と機能
| この部品の機能は「Silicon NPN epitaxial planer type(For high-frequency amplification)」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC2669 | TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS) 2SC2669
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2669
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV, IF stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collecto |
Toshiba Semiconductor |
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| 2SC5934 | PNP / NPN Epitaxial Planar Silicon Transistors Ordering number : ENN7906
2SA2117 , 2SC5934
PNP , NPN Epitaxial Planar Silicon Transistors
2SA2117 , 2SC5934
High Current Switching Applications
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process. High-speed switching. Large current capacitance. Low |
Sanyo Semicon Device |
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| 2SC5264LS | Inverter Lighting Applications Ordering number:ENN5287A
NPN Triple Diffused Planar Silicon Transistor
2SC5264LS
Inverter Lighting Applications
Features
· High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm 2079D
[2SC5264]
10.0 3.2
3.5 7.2
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Sanyo Semicon Device |
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| 2SC4689 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4689
Power Amplifier Applications
2SC4689
Unit: mm
Complementary to 2SA1804 Suitable for use in 55-W high fidelity audio amplifier’s output stage.
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter vo |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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