2SC2168の購入情報と機能
| この部品の機能は「Silicon NPN Power Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
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| 2SC3117 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:ENN1060C
PNP, NPN Epitaxial Planar Silicon Transistors
2SA1249, 2SC3117
160V, 1.5A Switching Applications
Uses
· Color TV sound output, converters, inverters.
Features
· High breakdown voltage. · Large current capacity. · Adoption of MBIT process.
Package Dimensions
unit:mm
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Sanyo Semicon Device |
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| 2SC2328A | NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SC2328A
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
FEATURES
* Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SC2328AL-x-T92-B
2SC2328AG-x-T92-B |
![]() Unisonic Technologies |
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| 2SC5552 | Silicon NPN triple diffusion mesa type(For horizontal deflection output) Power Transistors
2SC5552
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
(10.0)
15.5±0.5
φ 3.2±0.1 5°
3.0±0.3 5°
26.5±0.5
(23.4)
5° 5° 5° 0.7±0.1
I Features
High breakdown voltage, and high reliability through the use of a glass passivation layer |
Panasonic Semiconductor |
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| 2SC5029 | NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS) 2SC5029
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5029
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) High collector power dissipation: PC = 1.3 W High-spe |
Toshiba Semiconductor |
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