2SC1706の購入情報と機能
| この部品の機能は「SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC1706 Transistor | SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING |
Hitachi Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC4735 | 75A, 1A, NPN Silicon Transistor 27MHz CB Transceiver Driver Applications, · Large power type such as PC=1.5W when used without heatsink. · It is possible to make appliances more compact because its height on board is 9.5mm. |
 Sanyo Semicon Device |
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| 2SC5763 | Switching Regulator Applications Ordering number : ENN6989A
2SC5763
NPN Triple Diffused Planar Silicon Transistor
2SC5763
Switching Regulator Applications
Features
Package Dimensions
unit : mm 2010C
[2SC5763]
10.2 3.6 5.1
2.7 6.3
High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT p |
Sanyo Semicon Device |
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| 2SC4155 | FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
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 ETC |
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| 2SC5180 | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION DATA SHEET
SILICON TRANSISTOR
2SC5180
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
2
Low current consumption and high gain
S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
PACKAGE DIMENSIONS
(Units : mm) 2.1 ± 0.2 1.25 ± 0.1
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 NEC |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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