2SB767の購入情報と機能
| この部品の機能は「Silicon PNP epitaxial planer type(For low-frequency output amplification)」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SB767 Transistor | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB767
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD875
Unit: mm
s Features
q q q
4.5±0.1 1.6±0.2
1.5±0.1
Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equ |
Panasonic Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SB1292 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1292
DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1832 ·Excellent DC current gain characteristics ·Wide area of safe operation APPLICATIONS ·For use in low frequency power am |
 SavantIC |
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| 2SB882 | PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors |
 Sanyo Semicon Device |
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| 2SB1407S | Silicon PNP Epitaxial 2SB1407(L), (S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2121(L), (S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SB1407(L), (S)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base volta |
 Hitachi Semiconductor |
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| 2SB1257 | Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid/ Relay and Motor and General Purpose) (2 k Ω)(6 5 0 Ω) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1257 60 60 6 4(Pulse 6) 1 25(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
2SB1257
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Condition |
 Sanken electric |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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