2SB762の購入情報と機能
| この部品の機能は「SILICON POWER TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SB1182-R | PNP Silicon Epitaxial Transistors MCC
Micro Commercial Components
2SB1182-P
TM
omponents 20736 Marilla Street Chatsworth !"# $
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2SB1182-Q 2SB1182-R
PNP Silicon Epitaxial Transistors
Features
x x Low Collector Saturation Voltage Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flam |
![]() MCC |
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| 2SB1056 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1487 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications
PINNING PIN 1 2 3 Base Collector |
![]() SavantIC |
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| 2SB1157 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1157
DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1712 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
A |
![]() SavantIC |
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| 2SB1020A | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR 2SB1020A
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power)
2SB1020A
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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