2SB1237の購入情報と機能
| この部品の機能は「Medium Power Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SB928A | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SB928, 2SB928A
Silicon PNP epitaxial planar type
For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
10.0±0.3
1.5±0.1
10.5min.
q q q
High collector to emitter VCEO High collector powe |
Panasonic Semiconductor |
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| 2SB1465 | PNP SILICON EPITAXIAL TRANSISTOR DATA SHEET
DARLINGTON TRASISTOR
2SB1465
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed switching. This transistor is ideal |
![]() Renesas |
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| 2SB1180A | Silicon PNP Epitaxial Planar Type Power Transistors
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
Unit: mm
For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A - Features
High forward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit |
![]() Panasonic |
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| 2SB1050 | Silicon PNP epitaxial planer type(For low-frequency amplification) Transistor
2SB1050
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
s Features
q q q
1.5 R0.9 R0.9
0.4
2.4±0.2 2.0±0.2 3.5±0.1
0.85
(Ta=25˚C)
Ratings 30 20 7 8 5 1 150 55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Em |
Panasonic Semiconductor |
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