2SA968Aの購入情報と機能
| この部品の機能は「SILICON PNP EPITAXIAL TRANSISTOR PCT PROCESS」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SA1120 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1120
DESCRIPTION ·With TO-126 package ·High transition frequency ·Low collector saturation voltage APPLICATIONS ·Audio power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to moun |
![]() SavantIC |
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| 2SA100 | Ge PNP Drift |
![]() ETC |
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| 2SA680 | (2SA679 / 2SA680) Silicon POwer Transistors SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA679 2SA680
DESCRIPTION ·With TO-3 package ·Complement to type 2SC1079, 1080 ·High power dissipation APPLICATIONS ·For audio power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 si |
![]() SavantIC |
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| 2SA1680 | TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS) 2SA1680
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1680
Power Amplifier Applications Power Switching Applications
Unit: mm
Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW (Ta = 25 °C) High-speed |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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