2SA838の購入情報と機能
| この部品の機能は「Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SA838 Transistor | Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359) Transistor
2SA838
Silicon PNP epitaxial planer type
For high-frequency amplification Complementary to 2SC1359
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Features
q
High transition frequency fT.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to bas |
Panasonic Semiconductor |
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| 2SA838 Transistor | Silicon NPN epitaxial planer type(For high-frequency amplification) |
Panasonic Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SA0683 | Silicon PNP Epitaxial Type Transistor Vceo: -25V, Ic: -1A. Allowing supply with the radial taping. For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 |
Panasonic Semiconductor |
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| 2SA785 | PNP transistor
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 ROHM Semiconductor |
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| 2SA1767 | Transistor, Silicon PNP Epitaxial Type Transistor
2SA1767
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SC1473A
5.0±0.2
Unit: mm
4.0±0.2
q
High collector to emitter voltage VCEO.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak |
Panasonic Semiconductor |
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| 2SA1244 | TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS) 2SA1244
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1244
High Current Switching Applications
Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC3074
Absolute Maximum Ratings (Ta |
 Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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