2SA656の購入情報と機能
| この部品の機能は「Silicon POwer Transistors」です。 |
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製品の詳細 ( データシート PDF )

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| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SA1577-P | PNP Gneral Purpose Transistors MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
2SA1577-P 2SA1577-Q 2SA1577-R
PNP Gneral Purpose Transistors
Features
Lead Free Finish, RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
x x x |
![]() MCC |
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| 2SA1123 | Transistor, Silicon PNP Epitaxial Type Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC2631
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Features
q q q q
Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitt |
Panasonic Semiconductor |
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| 2SA696 | (2SA696 / 2SA697) PNP Transistor |
![]() ETC |
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| 2SA1683 | PNP Epitaxial Planar Silicon Transistors Ordering number:ENN3012
PNP Epitaxial Planar Silicon Transistors
2SA1683, 2SC4414
Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications
Features
· Adoption of FBET process. · High breakdown voltage : VCEO>80V.
Package Dimensions
unit:mm 2033A
[2SA1683, 2SC4414]
4.0 |
Sanyo Semicon Device |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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