2SA2127の購入情報と機能
| この部品の機能は「Bipolar Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SA1253 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:ENN1049E
PNP, NPN Epitaxial Planar Silicon Transistors
2SA1253, 2SC3135
High-hFE, AF Amp Applications
Features
· High VEBO. · Wide ASO and high durability against breakdown.
Package Dimensions
unit:mm 2033A
[2SA1253, 2SC3135]
4.0 2.2
1.8 3.0
0.6
0.4 0.5
0.4 0.4
15.0
( ) : 2 |
Sanyo Semicon Device |
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| 2SA1084 | Silicon PNP Epitaxial 2SA1083, 2SA1084, 2SA1085
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier Complementary pair with 2SC2545, 2SC2546 and 2SC2547
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SA1083, 2SA1084, 2SA1085
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base volt |
Hitachi Semiconductor |
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| 2SA1213 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1213
Power Amplifier Applications Power Switching Applications
2SA1213
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High speed switching time: tstg = 1.0 μs (typ.) Small flat package
PC = 1.0 to 2.0 W (mou |
Toshiba Semiconductor |
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| 2SA1049 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1049
2SA1049
Audio Frequency Amplifier Applications
Unit: mm
Small package. High breakdown voltage: VCEO = 120 V High hFE: hFE = 200~700 Excellent hFE linearity: hFE (IC = 0.1 mA), hFE (IC = 2 mA) = 0.95 (typ.) Low noise: NF |
Toshiba Semiconductor |
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