2SA2102の購入情報と機能
| この部品の機能は「Transistor, Silicon PNP Epitaxial Type」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SA2102 Transistor | Transistor, Silicon PNP Epitaxial Type
Power Transistors
2SA2102
Silicon PNP epitaxial planar type
Unit: mm
- Features
High-speed switching (tstg: storage time, tf: fall time is short) Low collector-emitter saturation voltage VCE(sat) Superior forward current transfer ratio hFE linearity TO-220D built-in: Excellent package with w |
Panasonic Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SAR542F3 | PNP -3.0A -30V Middle Power Transistor 2SAR542F3
PNP -3.0A -30V Middle Power Transistor
Parameter VCEO
IC
Value -30V
-3A
lFeatures
1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=-0.20V(Max.). (IC, IB=-1A, -50mA) 3) High collector current. IC=-3A(max),ICP=-6A(max) 4) Leadless small SMD package (HUML2020 |
 ROHM Semiconductor |
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| 2SA1971 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1971
High-Voltage Switching Applications
2SA1971
Unit: mm
High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base vol |
 Toshiba Semiconductor |
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| 2SA1382 | TRANSISTOR (POWER AMPLIFIER/ HIGH SPEED SWITCHING APPLICATIONS | Toshiba Semiconductor |
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| 2SA821S | HIGH VOLTAGE AMPLIFIER TRANSISTOR Transistors
2SA821S 2SC1651S
(94L-183-A35)
(94L-519-C35)
274
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The sp |
ROHM Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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