2SA1967の購入情報と機能
| この部品の機能は「NPN Triple Diffused Planar Silicon Transistor」です。 |
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製品の詳細 ( データシート PDF )
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SA1980M | PNP Silicon Transistor (General small signal amplifier)
Semiconductor
2SA1980M
PNP Silicon Transistor
Description
General small signal amplifier
Features
Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343M
Ordering Information
Type NO. 2SA1980M
Marking 1980
Package C |
![]() AUK corp |
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| 2SA1392 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN1943A
Features
· Adoption of FBET process. · AF amp.
PNP, NPN Epitaxial Planar Silicon Transistors
2SA1392, 2SC3383
AF Amp Applications
Package Dimensions
unit:mm 2003A
[2SA1392, 2SC3383]
( ) : 2SA1392
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector- |
Sanyo Semicon Device |
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| 2SA854 | Medium Power Transistor (-32V/ -0.5A) Transistors
Medium Power Transistor (*32V, *0.5A)
2SA1036K , 2SA1577 , 2SA854S
FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K , 2SC1741S , 2SC4097. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions |
ROHM Semiconductor |
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| 2SA1812 | High-voltage Switching Transistor (Telephone power supply) (-400V/ -0.5A) Transistors
2SA1812 , 2SA1727 , 2SA1776
High-voltage Switching Transistor ( 400V, 0.5A)
2SA1812 , 2SA1727 , 2SA1776
Features
1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC , IB = 3) High switching speed, typically tf : 1 s at IC = 100mA. 4 |
ROHM Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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