2N5307の購入情報と機能
| この部品の機能は「NPN Darlington Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2N5307 Transistor | NPN Darlington Transistor 2N5307
Discrete POWER & Signal Technologies
2N5307
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO |
Fairchild Semiconductor |
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| 2N5307 Amplifier | NPN DARLINGTON AMPLIFIER |
Micro Electronics |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2N5365 | (2N5365 / 2N5366) SILICON TRANSISTORS |  GE Solid State |
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| 2N5465 | JFET Amplifiers w
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 Motorola Semiconductor |
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| 2N5961 | NPN General Purpose Amplifier 2N5961
Discrete POWER & Signal Technologies
2N5961
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Rati |
Fairchild Semiconductor |
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| 2N5335 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N5335
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I |
 Seme LAB |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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