2N3962の購入情報と機能
| この部品の機能は「AMPLIFIER TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
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| 2N3962 Transistor | AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
2N3962 Symbol |
Motorola Semiconductors |
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| 2N3962 Transistor | PNP Silicon Transistor |
Solid State |
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| 2N3962 Data | Bipolar PNP Device |
Seme LAB |
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| 2N3962 Transistor | PNP SILICON TRANSISTOR |
Micro Electronics |
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| 2N3962 Data | Trans GP BJT PNP 60V 3-Pin TO-18 Box |
New Jersey Semiconductor |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2N3725AS | Trans GP BJT NPN 50V 3-Pin TO-39 | New Jersey Semiconductor |
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| 2N339 | 55V / NPN General Purpose Amplifier TO-92, This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. |
 Fairchild Semiconductor |
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| 2N3133 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB ( A) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.0 |
 Central |
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| 2N3963CSM | Bipolar PNP Device
2N3963CSM
Dimensions in mm (inches).
0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012)
2.54 ± 0.13 (0.10 ± 0.005)
3
2
1
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A=
0.76 ± 0.15 (0.03 ± 0.006)
Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package f |
 Semelab Plc |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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