UPD120N33TA データシート PDF
この部品の機能は「THREE-TERMINAL LOW-DROPOUT POSITIVE-VOLTAGE REGULATOR」です。
UPD120N33TA Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| UPD120N33TA | THREE-TERMINAL LOW-DROPOUT POSITIVE-VOLTAGE REGULATOR DATA SHEET
MOS INTEGRATED CIRCUIT
PD120Nxx Series
THREE-TERMINAL LOW-DROPOUT POSITIVE-VOLTAGE REGULATOR (OUTPUT CURRENT: 0.3 A)
DESCRIPTION The PD120Nxx series provides low-voltage output regulators with the output current capacitance of 0.3 A. The
output voltage varies according to the product ( |  |  |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| UPD411A | 4096-BIT DYNAMIC RAMS | NEC | |
| UPD4164-2 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY NEe Microcomputers, Inc.
65,536 x 1 BIT DYNAMIC
RANDOM ACCESS MEMORY
NEe
Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3
~rn~[m~~~illrnw
DESCR IPTI ON
The NEC , lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate b | NEC | |
| UPD411-1 | FULLY DECODED RANDOM ACCESS MEMORY | NEC | |
| UPD416-3 | 16384 x 1 Bit DYNAMIC NMOS RAM NEe Microcomputers, Inc.
18384 x 1 BIT DYNAMIC MOS
RANDOM ACCESS MEMORY
NEe
f' PD416 P. PD416·1 f' PD416·2
f'PD416·3
J.L PD416·5
DESCPIIIPTION
The NECI1PD416 is a 16384 words by 1 bit Dynamic MOS RAM. It is designed for memory applications where very low cost and large bit storage are importa | NEC | |
| UPD421-1 | 8K BIT STATIC RAM | NEC | |
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