TPH5R906NH データシート PDF
この部品の機能は「MOSFET, Transistor」です。
TPH5R906NH Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TPH5R906NH | MOSFET, Transistor TPH5R906NH
MOSFETs Silicon N-channel MOS (U-MOS -H)
TPH5R906NH
1. Applications
Switching Voltage Regulators Motor Drivers DC-DC Converters
2. Features
(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 18 nC (typ.) Low drain-sou | ![]() | ![]() |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TPH3300CNH | Silicon N-channel MOSFET | ![]() Toshiba | ![]() |
| TPH6400ENH | Silicon N-channel MOSFET MOSFETs Silicon N-channel MOS (U-MOS -H)
TPH6400ENH
1. Applications
High-Efficiency DC-DC Converters Switching Voltage Regulators
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 4.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 54 mΩ (typ.) (VGS = 10 V) (4) Low leakag | ![]() Toshiba | ![]() |
| TPH1110ENH | Silicon N-channel MOSFET | ![]() Toshiba | ![]() |
| TPH2010FNH | Silicon N-channel MOSFET MOSFETs Silicon N-channel MOS (U-MOS -H)
TPH2010FNH
1. Applications
High-Efficiency DC-DC Converters Switching Voltage Regulators
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) (4) Low leaka | ![]() Toshiba | ![]() |
| TPH4R50ANH | Field Effect Transistor | ![]() Toshiba | ![]() |
| 当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |


