MBR2550CT データシート PDF

INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR2550CT FEATURES ·Low power loss, high efficiency. ·High surge capacity. MECHANICAL CHARACTERISTICS ·in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ·Metal silicon junction,

MBR2535CT-MBR25150CT 25.0AMP. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge c

MBR2535CT - MBR2560CT Discrete POWER & Signal Technologies MBR2535CT - MBR2560CT Features Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier con

MBR30L45CT thru MBR30L100CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011, 65, EU and in accordance to WEEE 2002, 96, EC - H

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes MBR20100FCT-B SCHOTTKY BARRIER RECTIFIER FEATURES - Schottky Barrier Chip - Guard Ring Die Construction for Transient Protection - Low Power Loss,High Efficiency - High Surge Capability - High Current Capability a

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER MBR3035PT -MBR30100PT Voltage :35 ~100 V Current: 30 A - FEATURES High surge current capability Cases: Molded plastic - APPLICATIONS Rectifier - Outline Dimensions and Mark TO-3P, TO-247AD .245(6.2) .225(5.7) .645(16.4) .625(15.9) .323(8.2) .313(7.