MBR20H100C データシート PDF
この部品の機能は「20.0AMPS. Schottky Barrier Rectifiers」です。
MBR20H100C Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MBR20H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20H100C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Product Summary
VRRM (V) 100
IO (A) 2x10
VF (MAX) (V) @ +25°C
0.77
IR (MAX) (mA) @ +25°C
0.0045
Description
High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use | ![]() | ![]() |
| MBR20H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER | ![]() | ![]() |
| MBR20H100CT | 20.0AMPS. Schottky Barrier Rectifiers Pb
RoHS
COMPLIANCE
CREAT BY ART
MBR20H100CT - MBR20H200CT
20.0AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carriers Underwriters Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capab | ![]() | |
| MBR20H100CT | Schottky Barrier Rectifiers | ![]() | ![]() |
| MBR20H100CT | Schottky Barrier Diode MBR20H100CT
Rev.F Mar.-2016
描述 , Descriptions TO-220 塑封封 肖特基二 管。 Schottky Barrier Diode in a TO-220 Plastic Package.
DATA SHEET
特征 , Features
耗低,效率高。 Low power loss, high efficiency.
用途 , Applications
用于高 、低 、大 流整流二 管, | ![]() | ![]() |
| MBR20H100CT | Dual Common Cathode High Voltage Schottky Rectifier | ![]() | |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MBR10H200CT | Power Schottky Rectifier 深 深 半 股 有限公司 Shenzhen SI Semiconductors Co., LTD.
品 格 Product Specification
肖特基二 管, Power Schottky Rectifier
MBR10H200CT
●特点:抗高浪涌性能 高功效 低正向 大 流 低功耗 符合 RoHS 范 ●FEATURES:-HIGH SURGE CAPABILITY -HIGH EFFICIENCY -LO | SI Semiconductors | ![]() |
| MBRE1040 | Schottky Diode | ![]() BLUE ROCKET ELECTRONICS | ![]() |
| MBR0540T1G | Surface Mount Schottky Power Rectifier MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
Surface Mount Schottky Power Rectifier
SOD 123 Power Surface Mount Package
The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop reverse current tradeoff. Ideally suited fo | ON Semiconductor | ![]() |
| MBR6040R | Silicon Power Schottky Diode | ![]() GeneSiC | ![]() |
| MBRB30H30CT-1G | Power Rectifiers MBRB30H30CT-1G, MBR30H30CTG
SWITCHMODE™ Power Rectifiers 30 V, 30 A
Features and Benefits
Low Forward Voltage Low Power Loss, High Efficiency High Surge Capacity 150°C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) Guard-Ring for Stress Protection This is a Pb-Free D | ON Semiconductor | ![]() |
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