MBR20045CT データシート PDF

MCC Features  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR20020CT THRU MBR200100CT 200 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high e

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse

INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBRF20150 FEATURES ·Low power loss, high efficiency. ·Multilayer Metal -Silicon Potential Structure. ·Beautiful High Temperature Character. ·Have Over Voltage protect loop，high reliability. MECHANICAL CHARACTERISTICS ·

CREAT BY ART Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011, 65, EU and in accordance to WEEE 2002, 96, EC - Halogen-free according to IEC 61249-2-21 definition

SMD Type Schottky Diodes MBR120F ~ MBR1200F Diodes - Features ● Low power loss,high efficiency ● High forward surge current capability ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 SOD-123F Unit:mm Cathode Band Top View 1.0± 0.2 1.8± 0.1 0.10