MBR20040 データシート PDF

MCC Features  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR20020 THRU MBR200100 200 Amp Schottky Barrier Rectifier 20 to 100 Volts HALF PACK D Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high eff

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse

MBR1520CT THRU MBR15100CT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -15.0 Amperes 0.160 (4.05) 0.140 (3.55) 0.105 (2.67) 0.095 (2.41) TO-220AB 0.415(10.54) MAX 0.410(10.41) 0.390(9.91) PIN 123 0.154(3.91) DIA 0.148(3.74) 0.113(2.87) 0.103(2.62) 0.635(16.13) 0.

Transys Electronics LIMITED MBR3520(R) THRU MBR35100(R) SCHOTTKY DIODES STUD TYPE Features High Surge Capability Types up to 100V VRRM Maximum Ratings Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +175 35 A 35Amp Rectifier 20-100 Volts DO-4 B N MC Part Number Maximum Recurr

MBRS1635 thru MBRS16150 Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 -