MBR20035 データシート PDF

MCC Features  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR20020 THRU MBR200100 200 Amp Schottky Barrier Rectifier 20 to 100 Volts HALF PACK D Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high eff

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse

MBR2035CT-Y thru MBR20200CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011, 65, EU and in accordance to WEEE 2002, 96, EC

MBRA120 THRU MBRA100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 V Forward Current - 1 A Features Plastic package has Underwriters Laboratory flammability classification 94V-0 Metal silicon junction, majority carrier conduction For surface mount applications Guard ring f

MBRF1635 thru MBRF16150 Taiwan Semiconductor CREAT BY ART Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011, 65, EU and in accordanc