M29W640DT データシート PDF
この部品の機能は「64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory」です。
M29W640DT Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| M29W640DT | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase, Read VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAMMING TIME 10 s per Byte, |  |  |
| M29W640DT70N1E | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory | | |
| M29W640DT70N1F | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase, Read VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAMMING TIME 10 s per Byte, | | |
| M29W640DT70N1T | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory | | |
| M29W640DT70N6E | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase, Read VPP =12 V for Fast Program (optional)
s s
Figure 1. Packages
ACCESS TIME: 70, 90 ns PROGRAMMING TIME 10 s per Byte, | | |
| M29W640DT70N6F | 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory | | |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| M29W800DT | 3V supply flash memory M29W800DT M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
Features
Supply voltage VCC = 2.7 V to 3.6 V for program, erase and read
Access times: 45, 70, 90 ns
Programming time 10 μs per byte, word typical
19 memory blocks 1 boot block (top or bottom locat |  Numonyx | |
| M29W116BB | 16 Mbit Low Voltage Single Supply Flash Memory |  STMicroelectronics | |
| M29W116BT | 16 Mbit Low Voltage Single Supply Flash Memory M29W116BT M29W116BB
16 Mbit (2Mb x8, Boot Block) Low Voltage Single Supply Flash Memory
PRELIMINARY DATA
s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 70ns s PROGRAMMING TIME
10 s by Byte typical s 35 MEMORY BLOCKS
1 Boot Block (Top or Bottom Location) | STMicroelectronics | |
| M29W800DB | 3V supply flash memory | Numonyx | |
| M29W400DT55N6T | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME 10 s per Byte, Word typical 11 MEMORY BLOCKS | ST Microelectronics | |
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