KTA1266 データシート PDF
この部品の機能は「50V, 150mA, PNP TRANSISTOR」です。
検索結果を表示する |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| KTA1266 | 50V, 150mA, PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA), hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.). at f=1kHz. Complementary to KTC3198. MAXIMUM RATING (Ta=25 ) 1. Collector-Base Voltage:-50V, 2. Collector-E |  |  |
| KTA1266 | PNP Plastic Transistor ( -0.15A, -50V ) |  | |
| KTA1266 | PNP Plastic Transistor ( -0.15A, -50V ) Excellent hFE Linearity, Low Noise, Complementary to KTC3198.
1. Collector to Base Voltage VCBO -50 V
2. Collector to Emitter Voltage VCEO -50 V
3. Emitter to Base Voltage VEBO -5 V
4. Collector Current - Continuous IC -150 mA
5. Collector Power Dissipation PC 625 mW | | |
| KTA1266L | EPITAXIAL PLANAR PNP TRANSISTOR | | |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
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KTA1700
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
VCEO= -160V(Min) ·Complement to Type KTC2800
APPLICATIONS ·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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KTA1659A
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
VCEO= -180V(Min) ·Complement to Type KTC4370A
APPLICATIONS ·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAM | Inchange Semiconductor | |
| KTA1659 | Silicon PNP Power Transistors | Inchange Semiconductor | |
| KTA1042D | Silicon PNP Power Transistors isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KTA1042D
DESCRIPTION ·Low Collector-Emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·General purpose applications
ABSOLUTE MAXIMUM RATING | Inchange Semiconductor | |
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