D103 データシート PDF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25℃ Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power swit

TetraFET D1031UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 28V 1GH- SINGLE ENDED 0.360 ± 0.005 6 1.

TetraFET D1034UK METAL GATE RF SILICON FET MECHANICAL DATA B A C E (2 pls) K 1 2 3 4 F G 8 J Typ. 7 6 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W 28V 500MH- PUSH PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN D M Q P I N O H SUITABLE FOR BROAD BAND APPLICATIONS LOW

DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and, or types are available in every countr

SHINDENGEN General Purpose Rectifiers D10XB60H 600V 10A OUTLINE DIMENSIONS Case : 3S FEATURES Thin Single In-Line Package High current capacity with Small Package High IFSM Superior Thermal Conductivity APPLICATION Switching power supply Home Appliances, Office Equipment Factory Automation, Invert