BZX55B11 データシート PDF

BZX55B SILICON PLANAR ZENER DIODES Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Max. 0.45 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Glass Case DO-34 Dimensi

BZX55B2V0 ~ BZX55B100 VZ : 2.0 - 100 Volts PD : 500 mW SILICON ZENER DIODES DO - 35 0.079(2.0 )max. 1.00 (25.4) min. FEATURES : * Complete 2.0 to 100 Volts * High surge current capability 0.150 (3.8) max. * High peak reverse power dissipation * High reliability * Low leakage current 0.020 (0.

BZX55B... Vishay Telefunken Silicon Epitaxial Planar Z Diodes Features D D D D D D Very sharp reverse characteristic Low reverse current level Low noise Very high stability Available with tighter tolerances VZ tolerance ± 2% Applications Voltage stabilization 94 9367 Absolute Maximum Ratings Tj

BZX84C…SEW Series SILICON PLANAR ZENER DIODES 3 Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Operating Junction and Storage Temperature Range 12 1. Anode 3. Cathode Symbol PD Tj ,TS Value 200 - 55 to + 150 Unit mW OC Electrical Characteristics ( Ta = 25 OC unless other

BZX84C…SEW Series SILICON PLANAR ZENER DIODES 3 Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Operating Junction and Storage Temperature Range 12 1. Anode 3. Cathode Symbol PD Tj ,TS Value 200 - 55 to + 150 Unit mW OC Electrical Characteristics ( Ta = 25 OC unless other

BZX84C…SEW Series SILICON PLANAR ZENER DIODES 3 Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Operating Junction and Storage Temperature Range 12 1. Anode 3. Cathode Symbol PD Tj ,TS Value 200 - 55 to + 150 Unit mW OC Electrical Characteristics ( Ta = 25 OC unless other