AM29SL800CB150FC データシート PDF

PRELIMINARY Am29SL800C 8 Megabit (1 M x 8-Bit, 512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation 1.8 to 2.2 V for read, program, and erase operations Ideal for battery-powered applications s Manufactured on 0.32 m proces

FINAL Am28F020 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance Access times as fast as 70 ns s CMOS low power consumption 30 mA maximum active current 100 A maximum standby current No data retention power consumption s Compatibl

Analog Power AM2306NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, pow

FINAL Am29F040 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations Minimizes system level power requirements s Compatible with JEDEC-standards Pinout and software compatible with singlepower-supply Fla