AOD419 データシート PDF

AOD419 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current loa

AOD7N65, AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Cis

AOD5B65M1 650V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 650V breakdown voltage Very fast and soft recovery freewheeling diode High efficient turn-on di, dt controllability Low VCE(SAT) enables high efficiencies

AOD4286, AOI4286 100V N-Channel MOSFET General Description Product Summary The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely