AOD418 データシート PDF

AOD418, AOI418 30V N-Channel MOSFET General Description The AOD418, AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK, IPAK package, this device is well suited for high current load applica

AOD4180 80V N-Channel MOSFET General Description The AOD4180 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load

AOD4182 80V N-Channel MOSFET General Description The AOD4182 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load

AOD7S65, AOU7S65, AOI7S65 650V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By

AOD7B65M3 650V, 7A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 650V breakdown voltage Very fast and soft recovery freewheeling diode High efficient turn-on di, dt controllability Low VCE(SAT) enables high efficiencies

AOD5B65N1 650V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 650V breakdown voltage Very low turn-off switching loss with softness Fast and soft recovery freewheeling diode High efficient turn-on di, dt controllabil