AOD414 データシート PDF

Rev 4:Nov 2004 AOD414, AOD414L( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low sid

AOD4140 TM N-Channel SDMOS POWER Transistor General Description The AOD4140 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, loa

AOD4144 N-Channel SDMOSTM Power Transistor General Description The AOD4144 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load

AOD7S60, AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(

AOD7B65M3 650V, 7A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 650V breakdown voltage Very fast and soft recovery freewheeling diode High efficient turn-on di, dt controllability Low VCE(SAT) enables high efficiencies

AOD7S65, AOU7S65, AOI7S65 650V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By