AOB11S65 データシート PDF

AOT11S65, AOB11S65, AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providin

AOB5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV,

AOK20B65M1, AOT20B65M1, AOB20B65M1 650V, 20A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 650V breakdown voltage Very fast and soft recovery freewheeling diode High efficient turn-on di, dt controllability Low VCE(sat)

AOB416 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB416 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Sta