AO8800 データシート PDF
この部品の機能は「Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor」です。
AO8800 Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AO8800 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor July 2001
AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is su |  |  |
| AO8800 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |  | |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AO8801A | 20V P-Channel MOSFET AO8801A
20V P-Channel MOSFET
General Description
The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS ID (at VGS=-10V) RDS(ON) | FreesCale | |
| AO8808A | Dual N-Channel Enhancement Mode Field Effect Transistor |  Alpha & Omega Semiconductors | |
| AO8832 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This | Alpha & Omega Semiconductors | |
| AO8403 | P-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors | |
| AO8806 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Dec 2002
AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or |  ETC | |
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