AO6706 データシート PDF
この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。
AO6706 Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AO6706 | N-Channel Enhancement Mode Field Effect Transistor AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC |  |  |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AO6414 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors | |
| AO6603 | Complementary Enhancement Mode Field Effect Transistor AO6603 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO66 | Alpha & Omega Semiconductors | |
| AO6800 | Dual N-Channel Enhancement Mode Field Effect Transistor |  ETC | |
| AO6401 | P-Channel Enhancement Mode Field Effect Transistor AO6401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Pr | Alpha & Omega Semiconductors | |
| AO6407 | P-Channel Enhancement Mode Field Effect Transistor | ETC | |
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