AO6603 データシート PDF

AO6603 Complementary Enhancement Mode Field Effect Transistor General Description The AO6603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO66

AO6401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Pr

AO6422 20V N-Channel MOSFET General Description The AO6422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. Product Summary VDS = 20V ID = 5A (VGS = 4.5V) RDS(ON)