AO6424 データシート PDF
この部品の機能は「30V N-Channel MOSFET」です。
AO6424 Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AO6424 | 30V N-Channel MOSFET AO6424
30V N-Channel MOSFET
General Description
The AO6424 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications.
Features
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 5A < 31mΩ < 4 |  |  |
| AO6424 | 30V N-Channel MOSFET |  | |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AO6706 | N-Channel Enhancement Mode Field Effect Transistor AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC | Alpha & Omega Semiconductors | |
| AO6400 | N-Channel MOSFET | Alpha & Omega Semiconductors | |
| AO6405 | P-Channel Enhancement Mode Field Effect Transistor Aug 2002
AO6405 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -5 A RDS(ON) < | Alpha & Omega Semiconductors | |
| AO6420 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors | |
| AO6700 | N-Channel Enhancement Mode Field Effect Transistor AO6700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO6700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC- | Alpha & Omega Semiconductors | |
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