AO6422 データシート PDF

AO6422 20V N-Channel MOSFET General Description The AO6422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. Product Summary VDS = 20V ID = 5A (VGS = 4.5V) RDS(ON)

Aug 2002 AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -5 A RDS(ON) <

AO6700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-

AO6402A 30V N-Channel MOSFET General Description The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which ma