AO6401 データシート PDF

AO6401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Pr

AO6810 Dual N-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = 30V ID = 3.1 A (VGS = 10V) RDS(ON) < 77mΩ (VGS = 10V) RDS(ON) < 120mΩ (VGS = 4.5V) The AO6810 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is

AO6415 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD p

July 2001 AO6800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applicati