AO6401 データシート PDF

この部品の機能は「P-Channel Enhancement Mode Field Effect Transistor」です。


AO6401 Datasheet

部品番号 部品情報 メーカー PDF
AO6401P-Channel Enhancement Mode Field Effect Transistor

AO6401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Pr
datasheet AO6401 pdf

AO6401AP-Channel Enhancement Mode Field Effect Transistor

datasheet AO6401A pdf


関連検索結果

部品番号 部品情報 メーカー PDF
AO6810Dual N-Channel Enhancement Mode Field Effect Transistor

AO6810 Dual N-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = 30V ID = 3.1 A (VGS = 10V) RDS(ON) < 77mΩ (VGS = 10V) RDS(ON) < 120mΩ (VGS = 4.5V) The AO6810 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is
datasheet AO6810 pdf
AO6403P-Channel Enhancement Mode Field Effect Transistordatasheet AO6403 pdf
AO6415P-Channel Enhancement Mode Field Effect Transistor

AO6415 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD p
datasheet AO6415 pdf
AO660420V Complementary MOSFETdatasheet AO6604 pdf
AO6800Dual N-Channel Enhancement Mode Field Effect Transistor

July 2001 AO6800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applicati
datasheet AO6800 pdf




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