AM27X1024 データシート PDF
この部品の機能は「1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device」です。
AM27X1024 Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AM27X1024 | 1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device FINAL
Am27X1024
1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device
DISTINCTIVE CHARACTERISTICS
s As an OTP EPROM alternative: Factory optimized programming Fully tested and guaranteed s As a Mask ROM alternative: Shorter leadtime Lower volume per code s Fast access time 70 ns s Single +5 V power | ![]() | ![]() |
| AM27X1024-120JC | 1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device | ![]() | ![]() |
| AM27X1024-120JI | 1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device FINAL
Am27X1024
1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device
DISTINCTIVE CHARACTERISTICS
s As an OTP EPROM alternative: Factory optimized programming Fully tested and guaranteed s As a Mask ROM alternative: Shorter leadtime Lower volume per code s Fast access time 70 ns s Single +5 V power | ![]() | ![]() |
| AM27X1024-120PC | 1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device | ![]() | ![]() |
| AM27X1024-120PI | 1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device FINAL
Am27X1024
1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device
DISTINCTIVE CHARACTERISTICS
s As an OTP EPROM alternative: Factory optimized programming Fully tested and guaranteed s As a Mask ROM alternative: Shorter leadtime Lower volume per code s Fast access time 70 ns s Single +5 V power | ![]() | ![]() |
| AM27X1024-150JC | 1 Megabit (64 K x 16-Bit) CMOS ExpressROM Device | ![]() | ![]() |
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DISTINCTIVE CHARACTERISTICS
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N-Channel 20-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC, DC Conversion Circuits
AM2320NE
VDS (V) 20
PRODUCT SUMMARY rDS(on) (mΩ)
18 @ VG | ![]() Analog Power | ![]() |
| AM20P02-99D | P-Channel MOSFET | ![]() Analog Power | ![]() |
| AM2326N | N-Channel MOSFET Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management i | ![]() Analog Power | ![]() |
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