ACE7332M データシート PDF

ACE7332M N-Channel 30-V (D-S) MOSFET Description The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which ma

ACE7333M P-Channel 30-V (D-S) MOSFET Description The ACE7333M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features Low rDS(on) trench technology Low thermal impedance

ACE4922BEM Dual N-Channel Enhancement Mode Field Effect Transistor Description The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resis