ACE2607B データシート PDF

ACE2607B P-Channel Enhancement Mode Field Effect Transistor Description ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits for low voltage application such as portable equipment, power manageme

ACE2020M N-Channel 200-V MOSFET Description ACE2020M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC, DC converter. Features Low rDS(on)

ACE25Q800G 8M BIT SPI NOR FLASH Memory Series Description The ACE25Q800G is 8M-bit Serial Peripheral Interface(SPI) Flash memory, and supports the Dual, Quad SPI: Serial Clock, Chip Select, Serial Data I, O0 (SI), I, O1 (SO), I, O2 (, WP), and I, O3 (, HOLD). The Dual I, O data is transferred with s