60N60 データシート PDF
この部品の機能は「60A, 600V FIELD STOP IGBT」です。
60N60 Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 60N60 | Ultra-low Vce(sat) Igbt
Ultra-Low VCE(sat) IGBT
IXGN 60N60
VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V
Preliminary data sheet
E
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90° |  |  |
| 60N60FD1 | 60A, 600V FIELD STOP IGBT |  | |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 60N03 | Power MOSFET, Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
60N03
Power MOSFET
60 Amps,30Volts
N-Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Typical Applications
Power Supplies Converters Power Motor |  Tuofeng Semiconductor | |
| 60N10 | N-Channel MOSFET Transistor |  Inchange Semiconductor | |
| 60N05 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
60N05
Preliminary
60A, 50V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge.
The UTC 60N05 |  Unisonic Technologies | |
| 60N60FD1 | 60A, 600V FIELD STOP IGBT | Silan Microelectronics | |
| 60N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
60N06
·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance
: RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance
and reliable operat | Inchange Semiconductor | |
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