60N321 データシート PDF
この部品の機能は「GT60N321」です。
60N321 Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 60N321 | GT60N321 GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High-Power Switching Applications Fourth Generation IGBT
Unit: mm
FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (d |  |  |
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