2SA1262 データシート PDF
この部品の機能は「Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)」です。
検索結果を表示する |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SA1262 | Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) 2SA1262
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1262 60 60 6 4 1 30(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SA1262 100max |  |  |
| 2SA1262 | SILICON POWER TRANSISTOR |  | |
| 2SA1262 | POWER TRANSISTOR Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1262
DESCRIPTION ·With TO-220 package ·Complement to type 2SC3179 APPLICATIONS ·Audio and general purpose
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO- |  | |
| 2SA1262 | Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220 |  | |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SA1981 | SILICON PNP TRANSISTOR 2SA1981(3CG1981)
硅 PNP 半 三 管, SILICON PNP TRANSISTOR
用途:用于音 功率放大。
Purpose: Audio power amplifier application.
特点:高放大， 2SC5344(3DG5344)互 。
Features: High hFE, complementary pair with 2SC5344(3DG5344).
限 , Absolute maximum ratings(Ta=25℃)
符
|  LZG | |
| 2SA1981 | Silicon PNP transistor |  BLUE ROCKET ELECTRONICS | |
| 2SA1981 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA1981 TRANSISTOR (PNP)
FEATURES - High DC Current Gain - Complementary Pair with 2SC5344
TO 92
1. EMITTER 2. COLLECTOR 3. BASE
APPLICATIONS - Audio Power Amplifier Application
MAXIMUM RATINGS (Ta=25℃ un |  JCET | |
| 2SA1981 | PNP Plastic Encapsulated Transistor |  SeCoS | |
| 2SA1036K | PNP Silicon General Purpose Transistor Elektronische Bauelemente
2SA1036K
PNP Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
A L
3
S Top View
21
B
SC-59 Dim Min Max
A 2.70 3.10 B 1.30 1.70 C 1.00 1.30
n RoHS Compliant Product n Large IC. ICMax.= -500 mA n Low VCE(sat). Ideal for low-volt | SeCoS | |
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