2SA1162 データシート PDF

FEATURES Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. Plastic-Encapsulate Transistors 2SA1162(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junc

2SA1162 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions SOT-23 塑封封 PNP 半 三 管。Silicon PNP transistor in a SOT-23 Plastic Package.  特征 , Features 和集 直流 流大, 好的放大 性,高放大, 系 低, 2SC2712 互 。 High voltage and current, excellent hFE linearity

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA), hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~400

2SA1981(3CG1981) 硅 PNP 半 三 管, SILICON PNP TRANSISTOR 用途:用于音 功率放大。 Purpose: Audio power amplifier application. 特点:高放大， 2SC5344(3DG5344)互 。 Features: High hFE, complementary pair with 2SC5344(3DG5344). 限 , Absolute maximum ratings(Ta=25℃) 符

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1981 TRANSISTOR (PNP) FEATURES - High DC Current Gain - Complementary Pair with 2SC5344 TO 92 1. EMITTER 2. COLLECTOR 3. BASE APPLICATIONS - Audio Power Amplifier Application MAXIMUM RATINGS (Ta=25℃ un

Elektronische Bauelemente 2SA1036K PNP Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free FEATURES A L 3 S Top View 21 B SC-59 Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 n RoHS Compliant Product n Large IC. ICMax.= -500 mA n Low VCE(sat). Ideal for low-volt