2SA1104 データシート PDF

2SA1104 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL MT-100 CONDITIONS VBE = 0V TYP MAX 120 120 8 80 2 2.0 UNIT V V A A W V V s VCESM V

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1104 DESCRIPTION ·With TO-3PN package ·High frequency ·High power dissipation APPLICATIONS ·For use in audio and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fi

2SA1981(3CG1981) 硅 PNP 半 三 管, SILICON PNP TRANSISTOR 用途:用于音 功率放大。 Purpose: Audio power amplifier application. 特点:高放大， 2SC5344(3DG5344)互 。 Features: High hFE, complementary pair with 2SC5344(3DG5344). 限 , Absolute maximum ratings(Ta=25℃) 符

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1981 TRANSISTOR (PNP) FEATURES - High DC Current Gain - Complementary Pair with 2SC5344 TO 92 1. EMITTER 2. COLLECTOR 3. BASE APPLICATIONS - Audio Power Amplifier Application MAXIMUM RATINGS (Ta=25℃ un

Elektronische Bauelemente 2SA1036K PNP Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free FEATURES A L 3 S Top View 21 B SC-59 Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 n RoHS Compliant Product n Large IC. ICMax.= -500 mA n Low VCE(sat). Ideal for low-volt